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NSR0320MW2T1资料

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NSR0320MW2T1

Schottky Barrier Diodes

These Schottky barrier diodes are designed for high current,handling capability, and low forward voltage performance.

Features

•Low Forward Voltage − 0.24 Volts (Typ) @ IF = 10 mAdc•High Current Capability

•ESD Rating− Human Body Model: CLASS 3B•

− Machine Model: C

Pb−Free Packages are Available

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HIGH CURRENTSCHOTTKY BARRIER DIODEValue20232002.01

A

5125 Max−55 to +150

°C°C

RD= Specific Device CodeM= Date CodeG= Pb−Free Package

(Note: Microdot may be in either location)

UnitVdcVmWmW/°CA

1SOD−323CASE 477STYLE 1

RD MGGM1CATHODE2ANODEMAXIMUM RATINGS (TJ = 125°C unless otherwise noted)

Rating

Reverse VoltagePeak Revese VoltageForward Power Dissipation@ TA = 25°C

Derate above 25°CForward Current (DC)ContinuousForward Current

t = 8.3 ms Half SinewaveJunction TemperatureStorage Temperature Range

SymbolVRVRMPF

2MARKINGDIAGRAM

IFIFTJTstg

Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (notnormal operating conditions) and are not valid simultaneously. If these limits areexceeded, device functional operation is not implied, damage may occur andreliability may be affected.

ORDERING INFORMATION

DeviceNSR0320MW2T1

Package

Shipping†

SOD−3233000/Tape & Reel

NSR0320MW2T1GSOD−3233000/Tape & Reel

(Pb−Free)NSR0320MW2T3GSOD−32310,000/Tape & Reel

(Pb−Free)†For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationBrochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2005

October, 2005 − Rev. 1

Publication Order Number:

NSR0320MW2T1/D

NSR0320MW2T1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Total Capacitance (VR = 5.0 V, f = 1.0 MHz)Reverse Leakage (VR = 15 V)

Reverse Leakage (VR = 2.0 V @ 85° C)Reverse Leakage (VR = 15.0 V @ 85° C)Forward Voltage (IF = 10 mAdc)Forward Voltage (IF = 100 mAdc)Forward Voltage (IF = 900 mAdc)

SymbolCTIRIRIRVFVFVF

Min−−−−−−−

Typ25102004500.240.300.45

Max295030010000.270.350.50

UnitpFmAdcmAmAVdcVdcVdc

1000IF, FORWARD CURRENT (mA)IR, REVERSE CURRENT (mA)10000150°C1000125°C100

150°C85°C10010

85°C−55°C1025°C1051015202510.025°C0.1−45°C0.20.30.40.50.6VF, FORWARD VOLTAGE (V)VR, REVERSE VOLTAGE (V)Figure 1. Forward VoltageFigure 2. Leakage Current140120CT, CAPACITANCE (pF)10080604020005101520VR, REVERSE VOLTAGE (V)

Figure 3. Total Capacitance

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2

NSR0320MW2T1

PACKAGE DIMENSIONS

SOD−323CASE 477−02ISSUE G

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.

2.CONTROLLING DIMENSION: MILLIMETERS.

3.LEAD THICKNESS SPECIFIED PER L/F DRAWINGWITH SOLDER PLATING.

4.DIMENSIONS A AND B DO NOT INCLUDE MOLDFLASH, PROTRUSIONS OR GATE BURRS.5.DIMENSION L IS MEASURED FROM END OFRADIUS.

MILLIMETERS

DIMMINNOMMAXA0.800.901.00A10.000.050.10A30.15 REFb0.250.320.4C0.00.120.177D1.601.701.80E1.151.251.35L0.08HE2.302.502.70STYLE 1:

PIN 1.CATHODE

2.ANODE

INCHES

NOMMAX0.0350.0400.0020.0040.006 REF

0.0100.0120.0160.0030.0050.0070.0620.0660.0700.0450.0490.0530.003

0.0900.0980.105

HEDb12EMIN0.0310.000A3ALNOTE 5CNOTE 3

A1SOLDERING FOOTPRINT*

0.630.0250.830.0331.600.0632.850.112SCALE 10:1

mmǓǒinches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.

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3

NSR0320MW2T1

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. Alloperating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rightsnor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. ShouldBuyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an EqualOpportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:Literature Distribution Center for ON SemiconductorP.O. Box 61312, Phoenix, Arizona 85082−1312 USAPhone: 480−829−7710 or 800−344−3860 Toll Free USA/CanadaFax: 480−829−7709 or 800−344−3867 Toll Free USA/CanadaEmail: orderlit@onsemi.comN. American Technical Support: 800−282−9855 Toll FreeUSA/CanadaJapan: ON Semiconductor, Japan Customer Focus Center2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051Phone: 81−3−5773−3850ON Semiconductor Website: http://onsemi.comOrder Literature: http://www.onsemi.com/litorderFor additional information, please contact yourlocal Sales Representative.http://onsemi.com4NSR0320MW2T1/D

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