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专利名称：Method of fabricating thin film transistor发明人：Makoto Takatoku申请号：US09865104申请日：20010524
公开号：US20020066902A1公开日：20020606
专利附图：
摘要：A thin film transistor has a laminated structure comprising a semiconductor thinfilm, a gate insulator formed in contact with the surface of the semiconductor thin film,and a gate electrode disposed on the face side of the semiconductor thin film, and isformed on a substrate in a predetermined plan view shape. To fabricate the thin film
transistor, first, a first step is carried out in which a semiconductor thin film having a cleansurface is formed over the substrate. Next, a second step is carried out in which aprotective film PF is formed so as to cover the clean surface of the semiconductor thinfilm. Further, in a third step, the semiconductor thin film is patterned together with theprotective film PF according to the predetermined plan view shape of the thin filmtransistor. Thereafter, a fourth step is carried out in which the protective film PF isremoved from the upper side of the patterned semiconductor thin film to expose a cleansurface. Subsequently, a fifth step is carried out in which a gate insulator is formed incontact with the exposed surface of the semiconductor thin film.
申请人：TAKATOKU MAKOTO
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