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ELECTROSTATIC DISCHARGE PROTECTION STRUCTURES FOR

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专利名称:ELECTROSTATIC DISCHARGE PROTECTION

STRUCTURES FOR HIGH SPEED

TECHNOLOGIES WITH MIXED AND ULTRA-LOW VOLTAGE SUPPLIES

发明人:MERGENS, Marcus, c/o Sarnoff

Europe,VERHAEGE, Koen,ARMER, John,RUSS,Christian

申请号:EP02725177.6申请日:20020315公开号:EP1368874B2公开日:20150218

摘要:An electrostatic discharge (ESD) protection circuit (302) in a semiconductorintegrated circuit (IC) (100) having protected circuitry. In one embodiment, the ESDprotection circuit (302) includes a pad (104), adapted for connection to a protected circuitnode of the IC, and an ESD protection device (306), which is coupled between the pad andground (112). A diode turn-on device (308) is coupled in a forward conduction directionfrom the pad to a first gate (336) of the ESD protection device. In a second embodiment,the ESD protection circuit (2002) is an SCR having an anode (322) coupled to a first voltagesupply line, and a cathode coupled to ground. A parasitic capacitance (2004) is coupledbetween each the voltage supply line and the grounded cathode.

申请人:SOFICS BVBA

地址:BE

国籍:BE

代理机构:Badel, Xavier Claude Yves

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